Fig 4.TIF (1.62 MB)
X-Ray Nanoscopy of a Bulk Heterojunction - Fig 4
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posted on 2016-07-01, 17:51 authored by Nilesh Patil, Eirik Torbjørn Bakken Skjønsfjell, Niko Van den Brande, Elvia Anabela Chavez Panduro, Raf Claessens, Manuel Guizar-Sicairos, Bruno Van Mele, Dag Werner Breiby(a) Reconstructed phase contrast high resolution projection of P3HT/PCBM layer isothermally annealed for 7500 s at 127°C. The black line in the projection image corresponds to the PCBM concentration profile shown in (b). The red curve in (b) shows the fitting analysis applied to the PCBM concentration profile using Eq 5. The fitted parameters of L = 6.0 μm and D = 7 x 10−12 cm2 s-1 provide excellent agreement between the experimental data and the model.
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imaging techniquesPhase contrast X-ray microscopyelectron acceptor materialsnano-morphological changesbulk heterojunctionsUV-Vis irradiationphenyl-C 61-butyric acid methyl esterelectron donorall-organic blendsfuture studiesbulk heterojunction photoactive layersX-ray ptychographicP 3HTfast-scanning calorimetry chip setupphase-separated morphologyannealing timesorganic-organic blendsX-Ray Nanoscopydiffractive imagingPCBM diffusionvolume fractionBulk Heterojunction Optimizingdepletion zonephase contrast imagesvolume fraction gradientphase-segregated domainsphotovoltaic performancePCBM aggregates100 nmX-ray ptychography
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