Resistance to FSM and NFZ is improved by disrupting PGE with LIN.

(A) Resistance of WT plants and the indicated mutants was estimated by quantifying SE after germination and growth on media supplemented with 15 μM LIN (L), 30 μM FSM (F), or both (F+L) relative to non-supplemented medium. (B) Resistance of WT plants quantified as CHL levels in media supplemented with 15 μM LIN (L), 30 μM FSM (F), 35 nM NFZ (N) or the indicated combinations relative to non-supplemented medium. Data correspond to the mean and SEM values of n≥3 independent experiments.